Refractive index of ternary and quaternary compound semiconductors below the fundamental absorption edge: linear and nonlinear effects. [HgTe-CdTe; In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/; AlAs-GaAs]
Conference
·
OSTI ID:6684426
The index of refraction n is calculated as a function of frequency and mole fraction x for the following compounds: Hg/sub 1-x/Cd/sub x/Te, Al/sub x/Ga/sub 1-x/As, and In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-x/ lattice matched to InP. Lattice matching of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ to InP requires that x = 0.466 y. The theoretical result for the refractive index is obtained from a quantum mechanical calculation of the dielectric constant of a compound semiconductor. It is given in terms of the basic material parameters of band gap energy, effective electron mass m/sub n/, effective heavy hole mass m/sub p/, spin orbit splitting energy, lattice constant, and carrier concentration n/sub e/ or p for n-type or p-type materials, respectively. If these quantities are known as functions of mole fraction x, there are no adjustable parameters involved. A negative change in the refractive index near the fundamental absorption edge is predicted on passing radiation through a crystal if the change in carrier concentration of the initially unoccupied conduction band is assumed proportional to internal intensity 1. Comparison of theory with experimental data is given.
- Research Organization:
- Boston Univ., MA (USA). Dept. of Physics
- DOE Contract Number:
- AC02-79ER10444
- OSTI ID:
- 6684426
- Report Number(s):
- DOE/ER/10444-8; CONF-8311146-5; ON: DE84012325
- Country of Publication:
- United States
- Language:
- English
Similar Records
Linear and nonlinear intensity dependent refractive index of Hg/sub 1-x/Cd/sub x/Te
Refractive index of quaternary In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ lattice matched to InP
Dispersion of the refractive index of GaAs and Al /SUB x/ Ga /SUB 1-x/ As
Journal Article
·
Sat Oct 01 00:00:00 EDT 1983
· J. Appl. Phys.; (United States)
·
OSTI ID:5557600
Refractive index of quaternary In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ lattice matched to InP
Journal Article
·
Wed Jun 01 00:00:00 EDT 1983
· J. Appl. Phys.; (United States)
·
OSTI ID:6054372
Dispersion of the refractive index of GaAs and Al /SUB x/ Ga /SUB 1-x/ As
Journal Article
·
Sun May 01 00:00:00 EDT 1983
· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:5553059
Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CARRIER DENSITY
CHALCOGENIDES
CHEMICAL COMPOSITION
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MERCURY COMPOUNDS
MERCURY TELLURIDES
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
TELLURIDES
TELLURIUM COMPOUNDS
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CARRIER DENSITY
CHALCOGENIDES
CHEMICAL COMPOSITION
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MERCURY COMPOUNDS
MERCURY TELLURIDES
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
TELLURIDES
TELLURIUM COMPOUNDS