Dispersion of the refractive index of GaAs and Al /SUB x/ Ga /SUB 1-x/ As

Journal Article · Sun May 01 04:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071931· OSTI ID:5553059

Jensen, B; Torabi, A

The real part of the complex refractive index near the fundamental absorption edge is calculated for the ternary compound Al /SUB x/ Ga /SUB 1-x/ As, 0 less than or equal to x less than or equal to 0.3, as a function of frequency. An analytical expression for n is given which is derived from a quantum mechanical calculation of the dielectric constant of a semiconductor assuming the band structure of the Kane theory. The expression obtained is a function of bandgap energy, effective electron and heavy hole masses, the spin orbit splitting energy, the lattice constant, and the carrier concentration for n-type or p-type materials. The refractive index at the absorption edge is found as a function of the material parameters above. This enables one to express theoretical results in terms of basic material parameters only, with no adjustable constants. Comparison of theory with available experimental data is given for various reported values of the bandgap energy and effective masses as functions of mole fraction x.

• Research Organization: Dept. of Physics, Boston University, Boston, MA 02215
• DOE Contract Number: AC02-79ER10444
• OSTI ID: 5553059
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 19:5; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
DIELECTRIC PROPERTIES
DISPERSIONS
ELECTRICAL PROPERTIES
ENERGY GAP
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
LASER MATERIALS
LASERS
MATERIALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES