Dispersion of the refractive index of InP and ZnTe

Journal Article · Fri Apr 01 04:00:00 EST 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332218· OSTI ID:5581436

Jensen, B; Torabi, A

An analytical expression for the real part of the refractive index n near the fundamental absorption edge is given in terms of experimentally known quantities for a given semiconductor. It is derived from a quantum mechanical calculation of the complex dielectric constant which assumes the band structure of the Kane theory. The expression obtained is a function of the band-gap energy, the effective electron and heavy hole masses at the band edge, the spin orbit splitting energy, the carrier concentration for n- or p-type materials, the temperature, and the frequency of the incident radiation. Also involved is the value of n at the fundamental absorption edge, which is not accessible to measurement. However, an equation for n at the absorption edge can be found in terms of experimentally obtainable values of n near the absorption edge and solved to give the desired quantity. The refractive index can then be predicted to a high degree of accuracy over the entire frequency spectrum up to the band edge. In particular, the dispersion near the fundamental absorption edge which has been observed experimentally for a number of III-V and II-VI compounds is predicted and its precise calculation enabled. Within limits of the above statement regarding n at the absorption edge, there are no adjustable parameters involved. This constitutes a significant improvement over previous theories of the refractive index of a semiconductor, which typically involve several adjustable parameters. Theory is compared with available experimental results for InP and ZnTe. A method of determining the heavy hole effective mass from measurement of n in compounds where it is unknown is discussed.

• Research Organization: Department of Physics, Boston University, Boston, Massachusetts 02215
• DOE Contract Number: AC02-79ER10444
• OSTI ID: 5581436
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION
BAND THEORY
CARRIER DENSITY
CHALCOGENIDES
DIELECTRIC PROPERTIES
EFFECTIVE MASS
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
ENERGY GAP
EQUATIONS
FERMIONS
FREQUENCY DEPENDENCE
HOLES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LEPTONS
MASS
MATERIALS
MATHEMATICAL MODELS
MECHANICS
N-TYPE CONDUCTORS
OPTICAL DISPERSION
OPTICAL PROPERTIES
P-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM MECHANICS
REFRACTIVITY
SEMICONDUCTOR MATERIALS
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
ZINC COMPOUNDS
ZINC TELLURIDES