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Title: Improved GaSb-based quantum well laser performance through metamorphic growth on GaAs substrates

The promise of the metamorphic growth paradigm is to enable design freedom of the substrate selection criteria beyond current choices that are limited by lattice matching requirements. A demonstration of this emerging degree of freedom is reported here by directly comparing identical laser structures grown both pseudomorphically on a GaSb substrate and metamorphically on a GaAs substrate. Improved thermal performance of the metamorphic laser material enables a higher output power before thermal roll-over begins. These performance gains are demonstrated in minimally processed gain-guided broad-area type-I lasers emitting close to 2-μm wavelengths and mounted p-side up. Continuous wave measurements at room temperature yield a T{sub 0} of 145 K and peak output power of 192 mW from metamorphic lasers, compared to a T{sub 0} of 96 K and peak output power of 164 mW from identical lasers grown pseudomorphically on GaSb.
Authors:
; ; ; ;  [1]
  1. Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740 (United States)
Publication Date:
OSTI Identifier:
22395692
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; COMPARATIVE EVALUATIONS; DEGREES OF FREEDOM; GAIN; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; LASER MATERIALS; PERFORMANCE; QUANTUM WELLS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K