Bi-induced band gap reduction in epitaxial InSbBi alloys

Journal Article · Mon Nov 24 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902442· OSTI ID:22392056

Rajpalke, M. K.; Linhart, W. M.; Birkett, M.; Alaria, J.; Yu, K. M. ^[1]; Bomphrey, J. J.; Jones, T. S.; Sallis, S.; Piper, L. F. J. ^[2]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
2. Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

The properties of molecular beam epitaxy-grown InSb{sub 1−x}Bi{sub x} alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb{sub 0.976}Bi{sub 0.024}, a reduction of ∼35 meV/%Bi.

• OSTI ID: 22392056
• Journal Information: Applied Physics Letters, Vol. 105, Issue 21; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
BAND THEORY
BISMUTH COMPOUNDS
DROPLETS
ELECTRONIC STRUCTURE
FILMS
INDIUM ANTIMONIDES
LATTICE PARAMETERS
MEV RANGE 10-100
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
TEMPERATURE RANGE 0273-0400 K
X-RAY DIFFRACTION
ZINC SULFIDES