Bi-induced band gap reduction in epitaxial InSbBi alloys

Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.; Birkett, M.; Alaria, J.; Bomphrey, J. J.; Sallis, S.; Piper, L. F. J.; Jones, T. S.; Ashwin, M. J.; Veal, T. D.

doi:10.1063/1.4902442

Title: Bi-induced band gap reduction in epitaxial InSbBi alloys

Journal Article · Mon Nov 24 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902442· OSTI ID:1179636

Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.;

; Alaria, J.; Bomphrey, J. J.; Sallis, S.; Piper, L. F. J.; Jones, T. S.; Ashwin, M. J.;

The properties of molecular beam epitaxy-grown InSb_1-x Bi_x alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ~88 meV (14.1 μm) for InSb_0.976Bi_0.024, a reduction of ~35 meV/%Bi.

View Journal Article

Cite

Export

Save

Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-98CH10886; AC02-05CH11231

OSTI ID:: 1179636

Alternate ID(s):: OSTI ID: 1212662; OSTI ID: 1420682

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 105 Journal Issue: 21; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 36 works

Citation information provided by
Web of Science

References (30)

Band gap of GaAs1−xBix, 0<x<3.6% Francoeur, S.; Seong, M. -J.; Mascarenhas, A. Applied Physics Letters, Vol. 82, Issue 22 https://doi.org/10.1063/1.1581983	journal	June 2003
Valence band anticrossing in GaBixAs1−x Alberi, K.; Dubon, O. D.; Walukiewicz, W. Applied Physics Letters, Vol. 91, Issue 5 https://doi.org/10.1063/1.2768312	journal	July 2007
Composition dependence of photoluminescence of GaAs1−xBix alloys Lu, Xianfeng; Beaton, D. A.; Lewis, R. B. Applied Physics Letters, Vol. 95, Issue 4 https://doi.org/10.1063/1.3191675	journal	July 2009
Giant Spin-Orbit Bowing in ${GaAs}_{1 - x} {Bi}_{x}$ Fluegel, B.; Francoeur, S.; Mascarenhas, A. Physical Review Letters, Vol. 97, Issue 6 https://doi.org/10.1103/PhysRevLett.97.067205	journal	August 2006
Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy Das, S. K.; Das, T. D.; Dhar, S. Infrared Physics & Technology, Vol. 55, Issue 1 https://doi.org/10.1016/j.infrared.2011.11.003	journal	January 2012
Growth of GaSb _1−x Bi _x by molecular beam epitaxy Wang, Shumin; Saha Roy, Ivy; Shi, Peixiong Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 30, Issue 2 https://doi.org/10.1116/1.3672025	journal	March 2012
Growth and properties of GaSbBi alloys Rajpalke, M. K.; Linhart, W. M.; Birkett, M. Applied Physics Letters, Vol. 103, Issue 14 https://doi.org/10.1063/1.4824077	journal	September 2013
Temperature dependence of the band gap of GaSb _1−x Bi _x alloys with 0 < x ≤ 0.042 determined by photoreflectance Kopaczek, J.; Kudrawiec, R.; Linhart, W. M. Applied Physics Letters, Vol. 103, Issue 26 https://doi.org/10.1063/1.4858967	journal	December 2013
High Bi content GaSbBi alloys Rajpalke, M. K.; Linhart, W. M.; Birkett, M. Journal of Applied Physics, Vol. 116, Issue 4 https://doi.org/10.1063/1.4891217	journal	July 2014
Theoretical and experimental studies of electronic band structure for GaSb _{1− x} Bi _x in the dilute Bi regime Polak, M. P.; Scharoch, P.; Kudrawiec, R. Journal of Physics D: Applied Physics, Vol. 47, Issue 35 https://doi.org/10.1088/0022-3727/47/35/355107	journal	August 2014
Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys Kopaczek, J.; Rajpalke, M. K.; Linhart, W. M. Applied Physics Letters, Vol. 105, Issue 11 https://doi.org/10.1063/1.4895930	journal	September 2014
Propriétés des alliages InSb1−xBix I. Mesures électriques Jean-Louis, A. M.; Hamon, C. physica status solidi (b), Vol. 34, Issue 1 https://doi.org/10.1002/pssb.19690340134	journal	January 1969
Propriétés des alliages InSb1−xBix II. Absorption Optique Jean-Louis, A. M.; Ayrault, B.; Vargas, J. physica status solidi (b), Vol. 34, Issue 1 https://doi.org/10.1002/pssb.19690340135	journal	January 1969
Growth of InSb1-xBix single crystals by Czochralski method Joukoff, B.; Jean-Louis, A. M. Journal of Crystal Growth, Vol. 12, Issue 2 https://doi.org/10.1016/0022-0248(72)90047-4	journal	February 1972
Growth of metastable InSb _{1− x} Bi _x thin films by multitarget sputtering Zilko, J. L.; Greene, J. E. Applied Physics Letters, Vol. 33, Issue 3 https://doi.org/10.1063/1.90317	journal	August 1978
Indium antimonide‐bismuth compositions grown by molecular beam epitaxy Noreika, A. J.; Takei, W. J.; Francombe, M. H. Journal of Applied Physics, Vol. 53, Issue 7 https://doi.org/10.1063/1.331327	journal	July 1982
Growth and characterization of InSbBi for long wavelength infrared photodetectors Lee, J. J.; Kim, J. D.; Razeghi, M. Applied Physics Letters, Vol. 70, Issue 24 https://doi.org/10.1063/1.119158	journal	June 1997
Molecular beam epitaxy growth of InSb1−xBix thin films Song, Yuxin; Wang, Shumin; Saha Roy, Ivy Journal of Crystal Growth, Vol. 378 https://doi.org/10.1016/j.jcrysgro.2012.12.085	journal	September 2013
Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs Janotti, A.; Wei, Su-Huai; Zhang, S. B. Physical Review B, Vol. 65, Issue 11 https://doi.org/10.1103/PhysRevB.65.115203	journal	February 2002
InSb _{1- x} Bi _x Films Grown by Molecular Beam Epitaxy Oe, Kunishige; Ando, Seigo; Sugiyama, Koichi Japanese Journal of Applied Physics, Vol. 20, Issue 4 https://doi.org/10.1143/JJAP.20.L303	journal	April 1981
InAsSbBi alloys grown by organometallic vapor‐phase epitaxy Huang, K. T.; Chiu, C. T.; Cohen, R. M. Journal of Applied Physics, Vol. 75, Issue 6 https://doi.org/10.1063/1.356179	journal	March 1994
Metalorganic chemical vapor deposition and characterization of the In‐As‐Sb‐Bi material system for infrared detection Humphreys, T. P.; Chiang, P. K.; Bedair, S. M. Applied Physics Letters, Vol. 53, Issue 2 https://doi.org/10.1063/1.100350	journal	July 1988
InAsSbBi and InSbBi: Potential Material Systems for Infrared Detection Bedair, S. M.; Humphreys, T. P.; Chaing, P. K. MRS Proceedings, Vol. 90 https://doi.org/10.1557/PROC-90-447	journal	January 1986
SIMNRA, a simulation program for the analysis of NRA, RBS and ERDA Mayer, M. The fifteenth international conference on the application of accelerators in research and industry, AIP Conference Proceedings https://doi.org/10.1063/1.59188	conference	January 1999
Band parameters for III–V compound semiconductors and their alloys Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R. Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875 https://doi.org/10.1063/1.1368156	journal	June 2001
Molecular-beam epitaxy and lattice parameter of GaN _x Sb _{1− x} : deviation from Vegard's law for x > 0.02 Ashwin, M. J.; Morris, R. J. H.; Walker, D. Journal of Physics D: Applied Physics, Vol. 46, Issue 26 https://doi.org/10.1088/0022-3727/46/26/264003	journal	June 2013
Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy Gu, Yi; Wang, Kai; Zhou, Haifei Nanoscale Research Letters, Vol. 9, Issue 1 https://doi.org/10.1186/1556-276X-9-24	journal	January 2014
Organometallic vapor‐phase epitaxy growth and characterization of Bi‐containing III/V alloys Ma, K. Y.; Fang, Z. M.; Cohen, R. M. Journal of Applied Physics, Vol. 68, Issue 9 https://doi.org/10.1063/1.346166	journal	November 1990
Valence-band anticrossing in mismatched III-V semiconductor alloys Alberi, K.; Wu, J.; Walukiewicz, W. Physical Review B, Vol. 75, Issue 4 https://doi.org/10.1103/PhysRevB.75.045203	journal	January 2007
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs Usman, Muhammad; Broderick, Christopher A.; Lindsay, Andrew Physical Review B, Vol. 84, Issue 24 https://doi.org/10.1103/PhysRevB.84.245202	journal	December 2011

Similar Records

Bi-induced band gap reduction in epitaxial InSbBi alloys

Journal Article · Mon Nov 24 00:00:00 EST 2014 · Applied Physics Letters · OSTI ID:1179636

Rajpalke, M. K.; Linhart, W. M.; Birkett, M.; +6 more

Interaction between impurities in Bi- and Zn-doped InSb epitaxial layers

Journal Article · Mon Dec 01 00:00:00 EST 1986 · Inorg. Mater. (Engl. Transl.); (United States) · OSTI ID:1179636

Zinov'ev, V G; Lapkina, I A; Slavtsov, K B; +2 more

Bi flux-dependent MBE growth of GaSbBi alloys

Journal Article · Tue Sep 01 00:00:00 EDT 2015 · Journal of Crystal Growth · OSTI ID:1179636

Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.; +3 more

Related Subjects

36 MATERIALS SCIENCE
thin film growth
III-V semiconductors
lattice constants
Rutherford backscattering
fluid drops

Title: Bi-induced band gap reduction in epitaxial InSbBi alloys

Citation Formats

References (30)

Similar Records

Related Subjects