Room temperature photoluminescence from In{sub x}Al{sub (1−x)}N films deposited by plasma-assisted molecular beam epitaxy

Journal Article · Mon Sep 29 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896849· OSTI ID:22350795

Jiao, W. Y.; Kim, T. H.; Brown, A. S. ^[1]; Mohanta, A. ^[2]; Roberts, A. T. ^[3]; Fournelle, J. ^[4]; Losurdo, M. ^[5]; Everitt, H. O. ^[3]

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1. Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)
2. Oak Ridge Institute for Science and Education, Research Participation Program, U.S. Army Aviation and Missile Research, Development and Engineering Center (AMRDEC), Redstone Arsenal, Alabama 35898 (United States)
3. Charles Bowden Research Lab, Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States)
4. Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States)
5. Plasma Chemistry Research Center-CNR, via Orabona, 4-70126 Bari (Italy)

InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1−x)}N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

• OSTI ID: 22350795
• Journal Information: Applied Physics Letters, Vol. 105, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ALUMINIUM COMPOUNDS
CARRIERS
CHEMICAL VAPOR DEPOSITION
FILMS
GALLIUM NITRIDES
INDIUM COMPOUNDS
MICROSTRUCTURE
MODULATION
MOLECULAR BEAM EPITAXY
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PLASMA
TEMPERATURE RANGE 0273-0400 K