Phase degradation in BxGa1–xN films grown at low temperature by metalorganic vapor phase epitaxy

Gunning, Brendan P.; Moseley, Michael W.; Koleske, Daniel D.; Allerman, Andrew A.; Lee, Stephen R.

doi:10.1016/j.jcrysgro.2016.10.054

Phase degradation in B_xGa_1–xN films grown at low temperature by metalorganic vapor phase epitaxy

Journal Article · Tue Nov 01 00:00:00 EDT 2016 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2016.10.054· OSTI ID:1332951

Gunning, Brendan P. ^[1]; Moseley, Michael W. ^[1]; Koleske, Daniel D. ^[1]; Allerman, Andrew A. ^[1]; Lee, Stephen R. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Using metalorganic vapor phase epitaxy, a comprehensive study of B_xGa_1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750–900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to ~7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stacking faults and little or no room temperature photoluminescence emission. Films with <1% triethylboron (TEB) flow show more intense, narrower x-ray diffraction peaks, near-band-edge photoluminescence emission at ~362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. As a result, only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1332951

Alternate ID(s):: OSTI ID: 1416480

Report Number(s):: SAND--2016-11244J; PII: S0022024816306492

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

References (27)

BAlN thin layers for deep UV applications: BAlN thin layers for deep UV applications Li, Xin; Sundaram, Suresh; Gmili, Youssef El physica status solidi (a), Vol. 212, Issue 4 https://doi.org/10.1002/pssa.201400199	journal	March 2015
Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD: BGaN epitaxial layers by close-coupled showerhead MOCVD Malinauskas, T.; Kadys, A.; Stanionytė, S. physica status solidi (b), Vol. 252, Issue 5 https://doi.org/10.1002/pssb.201451560	journal	December 2014
Electrical and structural characterizations of BGaN thin films grown by metal-organic vapor-phase epitaxy Baghdadli, T.; Hamady, S. Ould Saad; Gautier, S. physica status solidi (c), Vol. 6, Issue S2 https://doi.org/10.1002/pssc.200880896	journal	January 2009
Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review Hadi, Walid A.; Shur, Michael S.; O’Leary, Stephen K. Journal of Materials Science: Materials in Electronics, Vol. 25, Issue 11 https://doi.org/10.1007/s10854-014-2226-2	journal	September 2014
Growth of GaBN ternary solutions by organometallic vapor phase epitaxy Polyakov, A. Y.; Shin, M.; Skowronski, M. Journal of Electronic Materials, Vol. 26, Issue 3 https://doi.org/10.1007/s11664-997-0157-x	journal	March 1997
Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H–SiC substrate by LP-MOVPE for deep-UV emission Takano, Takayoshi; Kurimoto, Makoto; Yamamoto, Jun Journal of Crystal Growth, Vol. 237-239 https://doi.org/10.1016/S0022-0248(01)02026-7	journal	April 2002
Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition Keller, S.; Keller, B. P.; Kapolnek, D. Journal of Crystal Growth, Vol. 170, Issue 1-4 https://doi.org/10.1016/S0022-0248(96)00553-2	journal	January 1997
Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers Teles, L. K.; Furthmüller, J.; Scolfaro, L. M. R. Physica E: Low-dimensional Systems and Nanostructures, Vol. 13, Issue 2-4 https://doi.org/10.1016/S1386-9477(02)00309-0	journal	March 2002
BGaN materials on GaN/sapphire substrate by MOVPE using N2 carrier gas Ougazzaden, A.; Gautier, S.; Sartel, C. Journal of Crystal Growth, Vol. 298 https://doi.org/10.1016/j.jcrysgro.2006.10.072	journal	January 2007
Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE Orsal, G.; Maloufi, N.; Gautier, S. Journal of Crystal Growth, Vol. 310, Issue 23 https://doi.org/10.1016/j.jcrysgro.2008.08.024	journal	November 2008
Connection between GaN and InGaN growth mechanisms and surface morphology Koleske, D. D.; Lee, S. R.; Crawford, M. H. Journal of Crystal Growth, Vol. 391 https://doi.org/10.1016/j.jcrysgro.2014.01.010	journal	April 2014
MOVPE grown periodic AlN/BAlN heterostructure with high boron content Li, X.; Sundaram, S.; El Gmili, Y. Journal of Crystal Growth, Vol. 414 https://doi.org/10.1016/j.jcrysgro.2014.09.030	journal	March 2015
MOVPE growth study of BxGa(1−x)N on GaN template substrate Gautier, S.; Sartel, C.; Ould Saad Hamady, S. Superlattices and Microstructures, Vol. 40, Issue 4-6 https://doi.org/10.1016/j.spmi.2006.09.021	journal	October 2006
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers Lee, S. R.; West, A. M.; Allerman, A. A. Applied Physics Letters, Vol. 86, Issue 24 https://doi.org/10.1063/1.1947367	journal	June 2005
Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties Powell, R. C.; Lee, N. ‐E.; Kim, Y. ‐W. Journal of Applied Physics, Vol. 73, Issue 1 https://doi.org/10.1063/1.353882	journal	January 1993
Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices Srour, H.; Salvestrini, J. P.; Ahaitouf, A. Applied Physics Letters, Vol. 99, Issue 22 https://doi.org/10.1063/1.3662974	journal	November 2011
Elastic constants of cubic and wurtzite boron nitrides Nagakubo, A.; Ogi, H.; Sumiya, H. Applied Physics Letters, Vol. 102, Issue 24 https://doi.org/10.1063/1.4811789	journal	June 2013
Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy Hirama, Kazuyuki; Taniyasu, Yoshitaka; Karimoto, Shin-ichi Applied Physics Letters, Vol. 104, Issue 9 https://doi.org/10.1063/1.4867353	journal	March 2014
Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data Schuster, M.; Gervais, P. O.; Jobst, B. Journal of Physics D: Applied Physics, Vol. 32, Issue 10A https://doi.org/10.1088/0022-3727/32/10A/312	journal	January 1999
X-ray diffraction of III-nitrides Moram, M. A.; Vickers, M. E. Reports on Progress in Physics, Vol. 72, Issue 3 https://doi.org/10.1088/0034-4885/72/3/036502	journal	February 2009
Gallium nitride devices for power electronic applications Baliga, B. Jayant Semiconductor Science and Technology, Vol. 28, Issue 7 https://doi.org/10.1088/0268-1242/28/7/074011	journal	June 2013
Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates Hatakeyama, Yoshitomo; Nomoto, Kazuki; Kaneda, Naoki IEEE Electron Device Letters, Vol. 32, Issue 12 https://doi.org/10.1109/LED.2011.2167125	journal	December 2011
3.7 kV Vertical GaN PN Diodes Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui IEEE Electron Device Letters, Vol. 35, Issue 2 https://doi.org/10.1109/LED.2013.2294175	journal	February 2014
Vertical Power p-n Diodes Based on Bulk GaN Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur IEEE Transactions on Electron Devices, Vol. 62, Issue 2 https://doi.org/10.1109/TED.2014.2360861	journal	February 2015
Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy: DISTINGUISHING CUBIC AND HEXAGONAL GAN Griffiths, Ij; Cherns, D.; Albert, S. Journal of Microscopy, Vol. 262, Issue 2 https://doi.org/10.1111/jmi.12285	journal	September 2015
Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices Salvestrini, J. P.; Ahaitouf, A.; Srour, H. SPIE OPTO, SPIE Proceedings https://doi.org/10.1117/12.914800	conference	January 2012
Phase evolution in boron nitride thin films Kester, D. J.; Ailey, K. S.; Davis, R. F. Journal of Materials Research, Vol. 8, Issue 6 https://doi.org/10.1557/JMR.1993.1213	journal	June 1993

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BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs Williams, Logan; Kioupakis, Emmanouil Applied Physics Letters, Vol. 111, Issue 21 https://doi.org/10.1063/1.4997601	journal	November 2017
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Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys Greenman, Kevin; Williams, Logan; Kioupakis, Emmanouil Journal of Applied Physics, Vol. 126, Issue 5 https://doi.org/10.1063/1.5108731	journal	August 2019
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Related Subjects

36 MATERIALS SCIENCE
X-ray diffraction
characterization
crystal structure
defects
metalorganic vapor phase epitaxy
nitrides