Metalorganic vapor-phase epitaxy of cubic Al{sub x}Ga{sub 1{minus}x}N alloy on a GaAs (100) substrate
- NTT Integrated Information Energy Systems Laboratories, 3-9-11, Midori-cho, Musashino-shi, Tokyo 180 (Japan)
Cubic Al{sub x}Ga{sub 1{minus}x}N was grown on a GaAs (100) substrate by using low-pressure metalorganic vapor-phase epitaxy with a GaN buffer layer grown at low and high temperatures. The high-growth{endash}temperature GaN layer improved the quality of the cubic Al{sub x}Ga{sub 1{minus}x}N. Also, the AlN molar fraction could be controlled by changing the carrier gas flow of trimethylaluminum. The Al{sub x}Ga{sub 1{minus}x}N epitaxial layers in the range of 0{le}x{le}0.23 exhibited strong near-band-edge photoluminescence at room temperature. Their photoluminescence peak energies show a linear dependence on the molar fraction. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 496368
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 70; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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