Analysis of compositional uniformity in Al_xGa_1-xN thin films using atom probe tomography and electron microscopy

Journal Article · Mon Jun 13 04:00:00 EDT 2016 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4953410· OSTI ID:1492417

Liu, Fang ^[1]; Huang, Li ^[1]; Porter, Lisa M. ^[1]; Davis, Robert F. ^[1]; Schreiber, Daniel K. ^[2]

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1. Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213
2. Energy and Environment Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352

Calculated frequency distributions of atom probe tomography reconstructions (~80 nm field of view) of very thin Al_xGa_1-xN (0.18 ≤ x ≤ 0.51) films grown via metalorganic vapor phase epitaxy on both (0001) GaN/AlN/SiC and (0001) GaN/sapphire heterostructures revealed homogeneous concentrations of Al and chemically abrupt Al_xGa_1-xN/GaN interfaces. The results of scanning transmission electron microscopy and selected area diffraction corroborated these results and revealed that neither superlattice ordering nor phase separation was present at nanometer length scales.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1492417
• Report Number(s): PNNL-SA-118551
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 4 Vol. 34; ISSN 0734-2101; ISSN JVTAD6
• Publisher: American Vacuum Society
• Country of Publication: United States
• Language: English

Related Subjects

atom probe tomography (APT)