Al{sub x}Ga{sub 1{minus}x}N based materials and heterostructures
Book
·
OSTI ID:580968
- Northwestern Univ., Evanston, IL (United States)
The authors present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of Al{sub x}Ga{sub 1{minus}x}N alloys on sapphire substrates. They report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using Al{sub x}Ga{sub 1{minus}x}N high quality films. They report the structural characterization of the Al{sub x}Ga{sub 1{minus}x}N/GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 10{sup 7} cm{sup {minus}2} was estimated in Al{sub x}Ga{sub 1{minus}x}N/GaN structures. The realization of Al{sub x}Ga{sub 1{minus}x}N based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.
- Sponsoring Organization:
- Office of Naval Research, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States)
- OSTI ID:
- 580968
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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