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Title: Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d²I/dV², and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E{sub C} derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process, opening an additional conductance channel and thus enhancing the total conductance.
Authors:
; ; ;  [1] ; ;  [1] ;  [2] ;  [3] ;  [4] ; ;  [3]
  1. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  2. (Ireland)
  3. CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)
  4. (Turkey)
Publication Date:
OSTI Identifier:
22305831
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON COMPOUNDS; COBALT COMPOUNDS; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRON BEAMS; ELECTRONS; INTERFACES; IRON COMPOUNDS; MAGNESIUM OXIDES; MAGNETORESISTANCE; MAGNONS; SEMICONDUCTOR JUNCTIONS; SPECTRA; TEMPERATURE DEPENDENCE; TUNNEL EFFECT