Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer

Journal Article · Sat Dec 07 04:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4838116· OSTI ID:22258708

Li, D. L.; Feng, J. F. ^[1]; Yu, G. Q.; Guo, P.; Wei, H. X.; Chen, J. Y.; Coey, J. M. D. ^[2]

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1. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
2. CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

Dynamic conductance dI/dV and inelastic electron tunneling spectroscopy (IETS) d{sup 2}I/dV{sup 2} have been measured at different temperatures for double barrier magnetic tunnel junctions with a thin top MgO layer. The resistance in the antiparallel state exhibits a normal tunnel-like behavior, while the resistance in the parallel state shows metallic-like transport, indicating the presence of pinholes in the thin top MgO layer. Three IETS peaks are the zero-bias anomaly, interface magnons, and barrier phonons in both the parallel and antiparallel states. The zero-bias anomaly is the strongest peak in the parallel state and its intensity decreases with temperature. The magnon has the largest intensity in the antiparallel state and its intensity also decreases with temperature. The origins of the dips and peaks in the dI/dV-V curve are also discussed.

• OSTI ID: 22258708
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 21 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ASYMMETRY
DIFFUSION BARRIERS
ELECTRON SPECTROSCOPY
LAYERS
MAGNESIUM OXIDES
MAGNONS
PEAKS
PHONONS
SUPERCONDUCTING JUNCTIONS
TUNNEL EFFECT
VENTILATION BARRIERS