Spin-dependent tunneling spectroscopy for interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

Journal Article · Fri Jan 01 04:00:00 EST 2010 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.81.064438· OSTI ID:979268

Du, G. X. ^[1]; Wang, Shouguo ^[1]; Ma, Q. L. ^[1]; Wang, Y. ^[1]; Ward, R. C. C. ^[2]; Zhang, Xiaoguang ^[3]; Kohn, A. ^[2]; Han, Prof. X. F. ^[1]

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1. Institute of Physics, Chinese Academy of Science
2. University of Oxford
3. ORNL

Low-voltage spin-dependent tunneling spectroscopy of an epitaxial Fe/MgO/Fe magnetic tunnel junction is measured and compared to first-principles calculation of the tunneling conductance. The measured dynamic conductance ($dI/dV$) in the parallel configuration shows distinct asymmetric features as a function of the bias voltage $$V$$. The peaks are independent of barrier thickness, magnetic field, and temperature. From the first-principles calculation, we identify the positive and negative bias spectra corresponding to different types of Fe/MgO interfaces. Tunneling spectroscopy thus can be used as a powerful tool for interface characterization.

• Research Organization: Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 979268
• Journal Information: Physical Review B, Journal Name: Physical Review B Journal Issue: 6 Vol. 81; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CONFIGURATION
MAGNETIC FIELDS
SPECTRA
SPECTROSCOPY
THICKNESS
TUNNELING