Spin-dependent tunneling spectroscopy for interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions
Journal Article
·
· Physical Review B
- Institute of Physics, Chinese Academy of Science
- University of Oxford
- ORNL
Low-voltage spin-dependent tunneling spectroscopy of an epitaxial Fe/MgO/Fe magnetic tunnel junction is measured and compared to first-principles calculation of the tunneling conductance. The measured dynamic conductance ($dI/dV$) in the parallel configuration shows distinct asymmetric features as a function of the bias voltage $$V$$. The peaks are independent of barrier thickness, magnetic field, and temperature. From the first-principles calculation, we identify the positive and negative bias spectra corresponding to different types of Fe/MgO interfaces. Tunneling spectroscopy thus can be used as a powerful tool for interface characterization.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 979268
- Journal Information:
- Physical Review B, Vol. 81, Issue 6; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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