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Title: Structural characterization of interfaces in epitaxial Fe/MgO/Fe magnetic tunnel junctions by transmission electron microscopy

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
; ; ;  [1];  [2];  [3];  [4];  [3]
  1. Department of Materials, University of Oxford, Oxford OX1 3PH (United Kingdom)
  2. Department of Materials Engineering, Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)
  3. Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom)
  4. Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois 60439 (United States)

We present a detailed structural characterization of the interfaces in Fe/MgO/Fe layers grown by molecular-beam epitaxy using aberration-corrected transmission electron microscopy (TEM), scanning TEM, and electron energy-loss spectroscopy. When fabricated into magnetic tunnel junctions, these epitaxial devices exhibit large tunnel magnetoresistance ratios (e.g., 318% at 10 K), though still considerably lower than the values predicted theoretically. The reason for this discrepancy is being debated and has been attributed to the structure of, and defects at the interface, namely, the relative position of the atoms, interface oxidation, strain, and structural asymmetry of the interfaces. In this structural study, we observed that Fe is bound to O at the interfaces. The interfaces are semicoherent and mostly sharp with a minor degree of oxidation. A comparison of the two interfaces shows that the top MgO/Fe interface is rougher.

OSTI ID:
21386914
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Vol. 82, Issue 2; Other Information: DOI: 10.1103/PhysRevB.82.024428; (c) 2010 The American Physical Society; ISSN 1098-0121
Country of Publication:
United States
Language:
English

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