Phonon-assisted transient electroluminescence in Si

Journal Article · Mon Jun 30 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4886376· OSTI ID:22304458

Cheng, Tzu-Huan ^[1]; Chu-Su, Yu ^[2]; Liu, Chien-Sheng ^[3]; Lin, Chii-Wann ^[4]

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1. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China)
2. Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan and Department of Laboratory Medicine, National Taiwan University Hospital, Taipei, Taiwan (China)
3. Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan (China)
4. Institute of Biomedical Engineering and Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)

The phonon-replica infrared emission is observed at room temperature from indirect band gap Si light-emitting diode under forward bias. With increasing injection current density, the broadened electroluminescence spectrum and band gap reduction are observed due to joule heating. The spectral-resolved temporal response of electroluminescence reveals the competitiveness between single (TO) and dual (TO + TA) phonon-assisted indirect band gap transitions. As compared to infrared emission with TO phonon-replica, the retarder of radiative recombination at long wavelength region (∼1.2 μm) indicates lower transition probability of dual phonon-replica before thermal equivalent.

• OSTI ID: 22304458
• Journal Information: Applied Physics Letters, Vol. 104, Issue 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENT DENSITY
ELECTROLUMINESCENCE
INFRARED RADIATION
INJECTION
JOULE HEATING
LIGHT EMITTING DIODES
PHONONS
PROBABILITY
RECOMBINATION
REDUCTION
SILICON
SPECTRA
TEMPERATURE RANGE 0273-0400 K
TRANSIENTS
WAVELENGTHS