Hot phonon and carrier relaxation in Si(100) determined by transient extreme ultraviolet spectroscopy

Cushing, Scott K.; Zürch, Michael; Kraus, Peter M.; Carneiro, Lucas M.; Lee, Angela; Chang, Hung-Tzu; Kaplan, Christopher J.; Leone, Stephen R.

doi:10.1063/1.5038015

Title: Hot phonon and carrier relaxation in Si(100) determined by transient extreme ultraviolet spectroscopy

Journal Article · Tue Sep 11 00:00:00 EDT 2018 · Structural Dynamics

DOI:https://doi.org/10.1063/1.5038015· OSTI ID:1506355

Cushing, Scott K. ^[1]; Zürch, Michael ^[2]; Kraus, Peter M. ^[2]; Carneiro, Lucas M. ^[1]; Lee, Angela ^[2]; Chang, Hung-Tzu ^[2]; Kaplan, Christopher J. ^[2]; Leone, Stephen R. ^[3]

Univ. of California, Berkeley, CA (United States). Dept. of Chemistry; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Chemical Sciences Division
Univ. of California, Berkeley, CA (United States). Dept. of Chemistry
Univ. of California, Berkeley, CA (United States). Dept. of Chemistry and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Chemical Sciences Division

The thermalization of hot carriers and phonons gives direct insight into the scattering processes that mediate electrical and thermal transport. Obtaining the scattering rates for both hot carriers and phonons currently requires multiple measurements with incommensurate timescales. Here, transient extreme-ultraviolet (XUV) spectroscopy on the silicon 2p core level at 100 eV is used to measure hot carrier and phonon thermalization in Si(100) from tens of femtoseconds to 200 ps, following photoexcitation of the indirect transition to the Δ valley at 800 nm. The ground state XUV spectrum is first theoretically predicted using a combination of a single plasmon pole model and the Bethe-Salpeter equation with density functional theory. The excited state spectrum is predicted by incorporating the electronic effects of photo-induced state-filling, broadening, and band-gap renormalization into the ground state XUV spectrum. A time-dependent lattice deformation and expansion is also required to describe the excited state spectrum. The kinetics of these structural components match the kinetics of phonons excited from the electron-phonon and phonon-phonon scattering processes following photoexcitation. Finally, separating the contributions of electronic and structural effects on the transient XUV spectra allows the carrier population, the population of phonons involved in inter- and intra-valley electron-phonon scattering, and the population of phonons involved in phonon-phonon scattering to be quantified as a function of delay time.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Swiss National Science Foundation (SNSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; Humboldt Foundation; Army Research Office (ARO); US Air Force Office of Scientific Research (AFOSR); Defense Advanced Research Projects Agency (DARPA)

Grant/Contract Number:: AC02-05CH11231; W31P4Q-13-1-0017

OSTI ID:: 1506355

Alternate ID(s):: OSTI ID: 1469433

Journal Information:: Structural Dynamics, Vol. 5, Issue 5; ISSN 2329-7778

Publisher:: American Crystallographic Association/AIPCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 32 works

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