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Title: Field emission characteristics from graphene on hexagonal boron nitride

An attempt has been made to utilize uniquely high electron mobility of graphene on hexagonal boron nitride (h-BN) to electron emitter. The field emission property of graphene/h-BN/Si structure has shown enhanced threshold voltage and emission current, both of which are key to develop novel vacuum nanoelectronics devices. The field emission property was discussed along with the electronic structure of graphene investigated by Fowler-Nordheim plot and ultraviolet photoelectron spectroscopy. The result suggested that transferring graphene on h-BN modified its work function, which changed field emission mechanism. Our report opens up a possibility of graphene-based vacuum nanoelectronics devices with tuned work function.
Authors:
 [1] ; ; ;  [2] ;  [3]
  1. National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)
  2. International Christian University, 3-10-2 Osawa, Mitaka, Tokyo 181-8585 (Japan)
  3. National Institute for Material Science (NIMS), 1-1-1 Namiki, Tsukuba 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22300077
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON NITRIDES; CURRENTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; ELECTRONS; FIELD EMISSION; FOWLER-NORDHEIM THEORY; GRAPHENE; HEXAGONAL LATTICES; PHOTOELECTRON SPECTROSCOPY; ULTRAVIOLET RADIATION; WORK FUNCTIONS NANOELECTRONICS