High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

Journal Article · Mon Feb 03 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4863840· OSTI ID:22283282

Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon ^[1]; Sup Choi, Min ^[2]; Hee Choi, Jun ^[3]; Zhong, Jianqiang; Chen, Wei ^[4]

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1. Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)
2. Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)
3. Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of)
4. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

• OSTI ID: 22283282
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON NITRIDES
DOPED MATERIALS
GRAPHENE
HETEROJUNCTIONS
HEXAGONAL LATTICES
INTERFACES
METALS
NONLINEAR PROBLEMS
PERFORMANCE
TUNNEL DIODES
TUNNEL EFFECT