Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

Journal Article · Wed Oct 15 00:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4897958· OSTI ID:22299615

Kiba, Takayuki; Murayama, Akihiro ^[1]; Tanaka, Toru ^[1]; Tamura, Yosuke ^[2]; Higo, Akio ^[3]; Thomas, Cedric ^[2]; Samukawa, Seiji ^[2]

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1. Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo (Japan)
2. Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai (Japan)
3. WPI-AIMR, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai (Japan)

We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.

• OSTI ID: 22299615
• Journal Information: AIP Advances, Vol. 4, Issue 10; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
GALLIUM ARSENIDES
QUANTUM WELLS
RELAXATION TIME
SPIN
TEMPERATURE DEPENDENCE