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Title: Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.
Authors:
;  [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [3] ;  [2] ;  [3] ;  [2] ;  [2]
  1. Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo (Japan)
  2. (Japan)
  3. Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai (Japan)
  4. WPI-AIMR, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai (Japan)
Publication Date:
OSTI Identifier:
22299615
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 10; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; GALLIUM ARSENIDES; QUANTUM WELLS; RELAXATION TIME; SPIN; TEMPERATURE DEPENDENCE