Observations of exciton and carrier spin relaxation in Be doped p-type GaAs

Journal Article · Mon Mar 17 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868873· OSTI ID:22257732

Asaka, Naohiro; Harasawa, Ryo; Tackeuchi, Atsushi ^[1]; Lu, Shulong; Dai, Pan ^[2]

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1. Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan)
2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Dushu Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215028 (China)

We have investigated the exciton and carrier spin relaxation in Be-doped p-type GaAs. Time-resolved spin-dependent photoluminescence (PL) measurements revealed spin relaxation behaviors between 10 and 100 K. Two PL peaks were observed at 1.511 eV (peak 1) and 1.497 eV (peak 2) at 10 K, and are attributed to the recombination of excitons bound to neutral Be acceptors (peak 1) and the band-to-acceptor transition (peak 2). The spin relaxation times of both PL peaks were measured to be 1.3–3.1 ns at 10–100 K, and found to originate from common electron spin relaxation. The observed existence of a carrier density dependence of the spin relaxation time at 10–77 K indicates that the Bir-Aronov-Pikus process is the dominant spin relaxation mechanism.

• OSTI ID: 22257732
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BERYLLIUM
DOPED MATERIALS
GALLIUM ARSENIDES
PHOTOLUMINESCENCE
RELAXATION TIME
SPIN