Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

Journal Article · Fri Dec 23 04:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666552· OSTI ID:21612428

Asami, T; Nosho, H; Tackeuchi, A ^[1]; Li, L H; Harmand, J C ^[2]; Lu, S L ^[3]

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1. Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan)
2. Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France)
3. Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

• OSTI ID: 21612428
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ANGULAR MOMENTUM
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
CATHODES
CRYSTAL GROWTH METHODS
CRYSTALS
ELECTRODES
EMISSION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM NITRIDES
INDIUM PHOSPHIDES
INTERFACES
LIFETIME
LUMINESCENCE
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PARTICLE PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCATHODES
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
POLARIZATION
QUANTUM WELLS
RECOMBINATION
RELAXATION
RELAXATION TIME
RESOLUTION
SPIN
SUBSTRATES
TEMPERATURE DEPENDENCE
TIME RESOLUTION
TIMING PROPERTIES