GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Journal Article · Mon Dec 05 00:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2140614· OSTI ID:20706463

Niu, Z C; Zhang, S Y; Ni, H Q; Wu, D H; Zhao, H; Peng, H L; Xu, Y Q; Li, S Y; He, Z H; Ren, Z W; Han, Q; Yang, X H; Du, Y; Wu, R H ^[1]

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1. State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Starting from the growth of high-quality 1.3 {mu}m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 {mu}m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 {mu}m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 {mu}m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 {mu}m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm{sup 2} with as-cleaved facet mirrors.

• OSTI ID: 20706463
• Journal Information: Applied Physics Letters, Vol. 87, Issue 23; Other Information: DOI: 10.1063/1.2140614; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY COMPOUNDS
CAVITY RESONATORS
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASER CAVITIES
LASER MIRRORS
MOLECULAR BEAM EPITAXY
NITROGEN COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT