Role of Sb in the growth and optical properties of 1.55 {mu}m GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy

Journal Article · Mon Oct 31 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2123383· OSTI ID:20706405

Sun, H D; Calvez, S; Dawson, M D; Gupta, J A; Sproule, G I; Wu, X; Wasilewski, Z R ^[1]

---

1. Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW (United Kingdom)

High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 {mu}m wavelength at room temperature with a narrow linewidth of {approx}34 meV (12 meV at 5 K) were fabricated by molecular-beam epitaxy on GaAs substrates. Photoluminescence and photoluminescence excitation spectroscopy were used to study the electronic states and optical properties of these heterostructures. By characterizing samples grown using different fluxes of Sb, the role played by Sb in the growth process and optical properties was elucidated. At low Sb flux, Sb atoms act mainly as a surfactant which improves the microstructure of the QWs and enhances the photoluminescence intensity. With an increase of Sb flux, some of the Sb atoms may incorporate into GaInNAs to form a quinary compound. In the latter case, the incorporation of Sb could also enhance the N composition in the QWs, which may be responsible for the further reduction of the band gap.

• OSTI ID: 20706405
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
CRYSTAL GROWTH
ENERGY GAP
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM NITRIDES
INDIUM ANTIMONIDES
INDIUM NITRIDES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SUBSTRATES
SURFACTANTS
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS