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Title: Ternary CuInS{sub 2} photoelectrodes created using the sulfurization of Cu–In metal precursors for photoelectrochemical applications

Graphical abstract: At an irradiation of 100 mW/cm{sup 2} from a Xe lamp, the highest photo-enhancement current density of sample (f) obtained in this study was 5.81 mA/cm{sup 2} at an external potential of +0.4 V vs. an Ag/AgCl electrode in Na{sub 2}S (0.35 M) + K{sub 2}SO{sub 3} (0.25 M) solution. These results show that the physical properties of CuInS{sub 2} can be controlled by changing the [In]/[In + Cu] molar ratio in the metal precursors using the reactive sulfurization process with the sputtering of Cu–In metal precursors. - Highlights: • CuInS{sub 2} is deposited on substrates using sulfurization of Cu–In precursors. • Samples with [In]/[Cu + In] ratio of below 0.49 are p-type semiconductors. • Samples with [In]/[Cu + In] ratio of above 0.51 are n-type semiconductors. • Sample with [In]/[Cu + In] ratio of 0.53 has a maximum PEC response. - Abstract: Copper indium disulfide semiconductor layers are deposited onto glass substrates or fluorine-doped tin oxide-coated glass substrates with the reactive sulfurization and the sputtering of Cu–In metal precursors. X-ray diffraction patterns and energy dispersive analysis of X-ray results reveal that the samples change from the Cu-rich tetragonal CuInS{sub 2} to the In-rich CuInS{sub 2} phase withmore » an increase in the [In]/[In + Cu] molar ratio in the metal precursors. The thicknesses and direct band gaps of the samples, determined from surface profile measurements and transmittance and reflectance spectra, are in the ranges of 0.82–1.29 μm and 1.39–1.53 eV, respectively. The carrier density and mobility of samples are in the ranges of 3.29 × 10{sup 14}–1.9 × 10{sup 20} cm{sup −3} and 0.58–17.41 cm{sup 2}/V s, respectively. A sample with an [In]/[In + Cu] molar ratio of 0.53 has a maximum photo enhancement current density of 5.81 mA/cm{sup 2} at an applied bias of 0.4 V vs. an Ag/AgCl electrode in aqueous Na{sub 2}S (0.35 M) + K{sub 2}SO{sub 3} (0.25 M) solution.« less
Authors:
; ;
Publication Date:
OSTI Identifier:
22290456
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 48; Journal Issue: 7; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; COPPER; COPPER SULFIDES; CURRENT DENSITY; DOPED MATERIALS; GLASS; INDIUM; INDIUM SULFIDES; PRECURSOR; SEMICONDUCTOR MATERIALS; SILVER CHLORIDES; SODIUM SULFIDES; SPUTTERING; SUBSTRATES; THICKNESS; TIN OXIDES; X-RAY DIFFRACTION