Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200 MeV Ag{sup 14+} ions

Journal Article · Mon Jan 20 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862471· OSTI ID:22280594

Kumar, Ashish ^[1]; Kumar, Tanuj; Kanjilal, D. ^[2]; Hähnel, A. ^[3]; Singh, R. ^[1]

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1. Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)
2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)
3. Max-Planck Institute for Microstructure Physics, Weinberg 2, 06120 Halle (Germany)

Ni/GaN Schottky barrier diodes were irradiated with 200 MeV Ag ions up to fluence of 1 × 10{sup 11} ions/cm{sup 2} at the substrate temperature of 80 K. Post-irradiation current-voltage measurements showed that the ideality factor, n increased and the reverse leakage current, I{sub R} decreased with increase in fluence. But Schottky barrier height, ϕ{sub b} increased only marginally with increase in ion fluence. In situ resistivity measurements showed orders of magnitude increase in resistivity of GaN epitaxial film with irradiation fluence. Cross-sectional transmission electron microscopy images revealed the presence of defect clusters in bulk GaN after irradiation.

• OSTI ID: 22280594
• Journal Information: Applied Physics Letters, Vol. 104, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONDUCTIVITY
EPITAXY
FILMS
GALLIUM NITRIDES
HETEROJUNCTIONS
INTERFACES
IRRADIATION
LEAKAGE CURRENT
MODIFICATIONS
MULTICHARGED IONS
NICKEL
PHYSICAL RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SILVER IONS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY