skip to main content

SciTech ConnectSciTech Connect

Title: Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200 MeV Ag{sup 14+} ions

Ni/GaN Schottky barrier diodes were irradiated with 200 MeV Ag ions up to fluence of 1 × 10{sup 11} ions/cm{sup 2} at the substrate temperature of 80 K. Post-irradiation current-voltage measurements showed that the ideality factor, n increased and the reverse leakage current, I{sub R} decreased with increase in fluence. But Schottky barrier height, ϕ{sub b} increased only marginally with increase in ion fluence. In situ resistivity measurements showed orders of magnitude increase in resistivity of GaN epitaxial film with irradiation fluence. Cross-sectional transmission electron microscopy images revealed the presence of defect clusters in bulk GaN after irradiation.
Authors:
 [1] ;  [2] ; ;  [3] ;  [4] ;  [1]
  1. Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)
  2. (India)
  3. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)
  4. Max-Planck Institute for Microstructure Physics, Weinberg 2, 06120 Halle (Germany)
Publication Date:
OSTI Identifier:
22280594
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; EPITAXY; FILMS; GALLIUM NITRIDES; HETEROJUNCTIONS; INTERFACES; IRRADIATION; LEAKAGE CURRENT; MODIFICATIONS; MULTICHARGED IONS; NICKEL; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SILVER IONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY