Defects and electrical behavior in 1 MeV Si{sup +}-ion-irradiated 4H-SiC Schottky diodes

Journal Article · Sun Jan 01 04:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2158501· OSTI ID:20787785

Roccaforte, F; Libertino, S; Raineri, V; Ruggiero, A; Massimino, V; Calcagno, L ^[1]

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1. CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121 Catania (Italy)

In this paper, the formation and evolution of defects induced by ion irradiation with 1 MeV Si{sup +} ions in Ni{sub 2}Si/4H-SiC Schottky diodes were studied and correlated with the electrical properties of the contacts. The current-voltage characteristics of the contacts monitored before and after irradiation showed an increase of the Schottky barrier height, of the series resistance, and of the leakage current with increasing irradiation fluence. The changes in the barrier height and in the series resistance values could be attributed to the dopant deactivation in the near-interface region, while the increase of the leakage current was associated with the formation of irradiation-induced defects. These defects showed an evolution with increasing irradiation fluence. Moreover, a combination of deep-level transient spectroscopy and current-voltage measurements of the diodes allowed us to demonstrate that the Z{sub 1}/Z{sub 2} center of 4H-SiC has the major influence on the increase of the diodes leakage current in the irradiated material.

• OSTI ID: 20787785
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEACTIVATION
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
INTERFACES
ION BEAMS
IRRADIATION
LEAKAGE CURRENT
MEV RANGE 01-10
SCHOTTKY BARRIER DIODES
SCHOTTKY DEFECTS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON IONS