Characteristic properties of Raman scattering and photoluminescence on ZnO crystals doped through phosphorous-ion implantation
- Department of Physics, Chosun University, Gwangju 501-759 (Korea, Republic of)
P-doped ZnO was fabricated by means of the ion-implantation method. At the Raman measurement, the blue shift of the E{sub 2}{sup high} mode and A{sub 1}(LO) phonon of the inactive mode were observed after the P-ion implantation. It suggested to be caused by the compressive stress. Thus, Hall effect measurement indicates that the acceptor levels exists in P-doped ZnO while still maintaining n-type ZnO. From the X-ray photoelectron spectroscopy, the chemical bond formation of the P2p{sub 3/2} spectrum consisted of 2(P{sub 2}O{sub 5}) molecules. Therefore, the implanted P ions were substituted to the Zn site in ZnO. From the photoluminescence (PL) spectra, P-related PL peaks were observed in the energy ranges of 3.1 and 3.5 eV, and its origin was analyzed at P{sub Zn}-2V{sub Zn} complexes, acting as a shallow acceptor. With increasing temperatures, the neutral-acceptor bound-exciton emission, (A{sup 0}, X), shows a tendency to quench the intensity and extend the emission linewidth. From the relations of the intensity and the linewidth as a function of temperature, the broadening of linewidth was believed to the result that the vibration mode of E{sub 2}{sup high} participates in the broadening process of (A{sup 0}, X) and the change of luminescent intensity was attributed to the partial dissociation of (A{sup 0}, X). Consequently, these facts indicate that the acceptor levels existed in P-doped ZnO layer by the ion implantation.
- OSTI ID:
- 22278096
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL BONDS
CRYSTALS
EMISSION SPECTRA
HALL EFFECT
ION IMPLANTATION
OSCILLATION MODES
PHONONS
PHOSPHORUS IONS
PHOSPHORUS OXIDES
PHOTOLUMINESCENCE
RAMAN EFFECT
RAMAN SPECTRA
TEMPERATURE DEPENDENCE
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES