High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

Journal Article · Fri Jan 01 00:00:00 EST 2016 · Journal of Luminescence

DOI:https://doi.org/10.1016/j.jlumin.2016.01.028· OSTI ID:1256812

Kumar, E. Senthil ^[1]; Mohammadbeigi, F. ^[1]; Boatner, Lynn A. ^[2]; Watkins, S. P. ^[1]

---

1. Simon Fraser Univ., Burnaby, BC (Canada)
2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Here, Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-dopants. We present high-resolution photoluminescence spectroscopy studies of unintentionally doped and Sn doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I10 bound exciton transition which was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. PL linewidths are exceptionally sharp for these samples, enabling clear identification of several donor species. Temperature dependent PL measurements of the I10 line emission energy and intensity dependence reveal a behavior similar to other shallow donors in ZnO. Ionized donor bound exciton and two electron satellite transitions of the I10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule), confirming the shallow nature of this defect center, which we attribute to a SnZn double donor compensated by an unknown single acceptor.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: Natural Sciences and Engineering Research Council of Canada (NSERC); USDOE; USDOE Office of Science (SC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• Grant/Contract Number: AC05-00OR22725
• OSTI ID: 1256812
• Alternate ID(s): OSTI ID: 1339003; OSTI ID: 22677681; OSTI ID: 1261287
• Journal Information: Journal of Luminescence, Journal Name: Journal of Luminescence Vol. 176; ISSN 0022-2313
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Sn
dopants
electrical transport
photoluminescence
zinc oxide