Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelength range

Journal Article · Mon Jan 13 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4861940· OSTI ID:22275725

Yacob, M.; Reithmaier, J. P.

The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 × 10{sup 8} cm{sup −2} are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 μm with narrow excitonic linewidth below 50 μeV, which can be used as single photon source in the telecom wavelength range.

• OSTI ID: 22275725
• Journal Information: Applied Physics Letters, Vol. 104, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DENSITY
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTONS
QUANTUM DOTS