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Title: Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors

The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380keV and fluences of 10{sup 14}, 10{sup 15} and 10{sup 16} protons/cm{sup 2} is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 10{sup 15} protons/cm{sup 2} the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.
Authors:
; ;  [1] ; ; ;  [2] ; ;  [3]
  1. Dept. of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
  2. Dept. of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan and Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi Universit (Japan)
  3. Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1233 Watanuki-cho, Takasaki, Gunma 370-1292 (Japan)
Publication Date:
OSTI Identifier:
22266043
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1585; Journal Issue: 1; Conference: IRAGO conference 2013, Aichi (Japan), 24-25 Oct 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ANNEALING; CATHODOLUMINESCENCE; GALLIUM NITRIDES; IRRADIATION; PROTONS; SENSITIVITY; SENSORS