Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons

Journal Article · Mon Jan 13 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4861902· OSTI ID:22275767

Abderrahmane, A.; Tashiro, T.; Takahashi, H. ^[1]; Okada, H.; Sandhu, A. ^[1]; Sato, S.; Ohshima, T. ^[2]

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1. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
2. Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1233 Watanuki-cho, Takasaki, Gunma 370-1292 (Japan)

The effect of annealing on the magnetoelectrical properties of proton-irradiated micro-Hall sensors at an energy of 380 keV and very high proton fluences was studied. Recovery of the electron mobility and a decrease in the sheet resistance of the annealed micro-Hall sensors, as well as an enhancement in their magnetic sensitivity were reported. Trap removal and an improvement in the crystal quality by removing defects were confirmed through current–voltage measurements and Raman spectroscopy, respectively.

• OSTI ID: 22275767
• Journal Information: Applied Physics Letters, Vol. 104, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ELECTRON MOBILITY
GALLIUM NITRIDES
HALL EFFECT
PROTONS
RAMAN SPECTROSCOPY
SENSORS