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Title: Structural and luminescent properties of electron-irradiated silicon

Structural defects induced by electron irradiation of p-Cz-Si wafers were identified. The influence of the annealing conditions in a chlorine-containing atmosphere on the structural and luminescent properties of the samples was examined. Light-emitting diodes based on electron-irradiated and high-temperature-annealed wafers were fabricated by a vapour-phase epitaxy technique and their luminescence properties were studied. A high-intensity dislocation-related D1 line was observed at 1.6 μm in the room-temperature electroluminescence spectrum.
Authors:
;  [1] ; ; ; ;  [2] ;  [3] ;  [4] ; ;  [5]
  1. Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia and Fok Institute of Physics, St. Petersburg State University, 198504 St. Petersburg (Russian Federation)
  2. Ioffe Physical-Technical Institute, 194021 St. Petersburg (Russian Federation)
  3. Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia and St. Petersburg State Technical University, 195251 St. Petersburg (Russian Federation)
  4. Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk (Russian Federation)
  5. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou (China)
Publication Date:
OSTI Identifier:
22263726
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CHLORINE; DEFECTS; DISLOCATIONS; ELECTROLUMINESCENCE; ELECTRONS; IRRADIATION; LIGHT EMITTING DIODES; SILICON; SPECTRA; VAPOR PHASE EPITAXY