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Title: Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination

This study presents electrically detected magnetic resonance (EDMR) measurements on a silicon carbide (SiC) MOSFET having the structure of a double-diffused silicon MOSFET (DMOS). The resonance pattern of a SiC DMOS was measured by monitoring the change of the recombination current between the source/body and the drain. The amplitude of the response has a maximum when the device is biased in depletion due to the equal concentrations of electrons and holes at the interface resulting in the most efficient recombination. The measured anisotropic g-tensor has axial symmetry with g{sub ∥} = 2.0051(4) (B ‖ c-axis), and g{sub ⊥} = 2.0029(4) (B⊥ c-axis) and the pattern shows several hyperfine (HF) peaks. We tentatively identify the observed defect as a silicon vacancy located directly at the interface.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. KAI GmbH, Europastrasse 8, 9500 Villach, Austria and Graz University of Technology - Institute of Solid State Physics, Petersgasse 16, 8020 Graz (Austria)
  2. Graz University of Technology - Institute of Solid State Physics, Petersgasse 16, 8020 Graz (Austria)
  3. Graz University of Technology - Institute of Experimental Physics, Petersgasse 16, 8020 Graz (Austria)
  4. Infineon Technologies, Schottkystrasse 10, 91058 Erlangen (Germany)
  5. Infineon Technologies, Siemensstrasse 2, 9500 Villach (Australia)
Publication Date:
OSTI Identifier:
22263682
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1583; Journal Issue: 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; AXIAL SYMMETRY; DEFECTS; INTERFACES; MAGNETIC RESONANCE; MOSFET; PEAKS; RECOMBINATION; SILICON; SILICON CARBIDES; TENSORS