Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination
- KAI GmbH, Europastrasse 8, 9500 Villach, Austria and Graz University of Technology - Institute of Solid State Physics, Petersgasse 16, 8020 Graz (Austria)
- Graz University of Technology - Institute of Solid State Physics, Petersgasse 16, 8020 Graz (Austria)
- Graz University of Technology - Institute of Experimental Physics, Petersgasse 16, 8020 Graz (Austria)
- Infineon Technologies, Schottkystrasse 10, 91058 Erlangen (Germany)
- Infineon Technologies, Siemensstrasse 2, 9500 Villach (Australia)
This study presents electrically detected magnetic resonance (EDMR) measurements on a silicon carbide (SiC) MOSFET having the structure of a double-diffused silicon MOSFET (DMOS). The resonance pattern of a SiC DMOS was measured by monitoring the change of the recombination current between the source/body and the drain. The amplitude of the response has a maximum when the device is biased in depletion due to the equal concentrations of electrons and holes at the interface resulting in the most efficient recombination. The measured anisotropic g-tensor has axial symmetry with g{sub ∥} = 2.0051(4) (B ‖ c-axis), and g{sub ⊥} = 2.0029(4) (B⊥ c-axis) and the pattern shows several hyperfine (HF) peaks. We tentatively identify the observed defect as a silicon vacancy located directly at the interface.
- OSTI ID:
- 22263682
- Journal Information:
- AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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