Radiation induced defects in CVD-grown 3C-SiC

Conference · Sat Dec 01 04:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5776191

Itoh, H; Yoshikawa, M ^[1]; Nashiyama, I; Misawa, S; Okumura, H; Yoshida, S ^[2]

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1. Japan Atomic Energy Research Inst., 1233 Watanuki, Takasaki, Gunma 370-12 (JP)
2. Electrotechnical Lab., 1-1-4 Umezono, Tsukuba, Ibaraki (JP)

Radiation induced defects in 3C-SiC epitaxially grown by chemical vapor deposition method were studied with electron spin resonance (ESR) technique. A fifteen-line ESR spectrum was observed in 2 MeV proton and 1 MeV electron irradiated 3C-SiC when the magnetic field was applied parallel to the {l angle}100{r angle} axis. This spectrum labeled T1, which has an isotropic g-value of 2.0029 {plus minus} 0.0001, is interpreted by simultaneous hyperfine interactions of a paramagnetic electron with surrounding {sup 13}C at four carbon sits and {sup 29}Si at twelve silicon sites. It indicates that the T1 spectrum arises from a point defect at a silicon site. The observed hyperfine interactions with neighboring {sup 13}C and {sup 29}Si nuclei are discussed in terms of a simple molecular-orbital treatment of the defect.

• OSTI ID: 5776191
• Report Number(s): CONF-900723--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Journal Volume: 37:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
BARYONS
CARBIDES
CARBON 13
CARBON COMPOUNDS
CARBON ISOTOPES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRON SPIN RESONANCE
ELECTRONS
ELEMENTARY PARTICLES
ENERGY RANGE
EPITAXY
EVEN-ODD NUCLEI
FERMIONS
G VALUE
HADRONS
ISOTOPES
ISOTROPY
LEPTONS
LIGHT NUCLEI
MAGNETIC RESONANCE
MEV RANGE
MEV RANGE 01-10
NUCLEI
NUCLEONS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
PROTONS
RADIATION EFFECTS
RESONANCE
SILICON 29
SILICON CARBIDES
SILICON COMPOUNDS
SILICON ISOTOPES
STABLE ISOTOPES
SURFACE COATING