skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Radiation induced defects in CVD-grown 3C-SiC

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
OSTI ID:5776191
;  [1]; ; ; ;  [2]
  1. Japan Atomic Energy Research Inst., 1233 Watanuki, Takasaki, Gunma 370-12 (JP)
  2. Electrotechnical Lab., 1-1-4 Umezono, Tsukuba, Ibaraki (JP)

Radiation induced defects in 3C-SiC epitaxially grown by chemical vapor deposition method were studied with electron spin resonance (ESR) technique. A fifteen-line ESR spectrum was observed in 2 MeV proton and 1 MeV electron irradiated 3C-SiC when the magnetic field was applied parallel to the {l angle}100{r angle} axis. This spectrum labeled T1, which has an isotropic g-value of 2.0029 {plus minus} 0.0001, is interpreted by simultaneous hyperfine interactions of a paramagnetic electron with surrounding {sup 13}C at four carbon sits and {sup 29}Si at twelve silicon sites. It indicates that the T1 spectrum arises from a point defect at a silicon site. The observed hyperfine interactions with neighboring {sup 13}C and {sup 29}Si nuclei are discussed in terms of a simple molecular-orbital treatment of the defect.

OSTI ID:
5776191
Report Number(s):
CONF-900723-; CODEN: IETNA; TRN: 91-014189
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 37:6; Conference: 27. IEEE annual conference on nuclear and space radiation effects, Reno, NV (USA), 16-20 Jul 1990; ISSN 0018-9499
Country of Publication:
United States
Language:
English