Radiation induced defects in CVD-grown 3C-SiC
- Japan Atomic Energy Research Inst., 1233 Watanuki, Takasaki, Gunma 370-12 (JP)
- Electrotechnical Lab., 1-1-4 Umezono, Tsukuba, Ibaraki (JP)
Radiation induced defects in 3C-SiC epitaxially grown by chemical vapor deposition method were studied with electron spin resonance (ESR) technique. A fifteen-line ESR spectrum was observed in 2 MeV proton and 1 MeV electron irradiated 3C-SiC when the magnetic field was applied parallel to the {l angle}100{r angle} axis. This spectrum labeled T1, which has an isotropic g-value of 2.0029 {plus minus} 0.0001, is interpreted by simultaneous hyperfine interactions of a paramagnetic electron with surrounding {sup 13}C at four carbon sits and {sup 29}Si at twelve silicon sites. It indicates that the T1 spectrum arises from a point defect at a silicon site. The observed hyperfine interactions with neighboring {sup 13}C and {sup 29}Si nuclei are discussed in terms of a simple molecular-orbital treatment of the defect.
- OSTI ID:
- 5776191
- Report Number(s):
- CONF-900723-; CODEN: IETNA; TRN: 91-014189
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 37:6; Conference: 27. IEEE annual conference on nuclear and space radiation effects, Reno, NV (USA), 16-20 Jul 1990; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON CARBIDES
PHYSICAL RADIATION EFFECTS
CARBON 13
CHEMICAL VAPOR DEPOSITION
ELECTRON SPIN RESONANCE
ELECTRONS
EPITAXY
G VALUE
ISOTROPY
MEV RANGE 01-10
POINT DEFECTS
PROTONS
SILICON 29
BARYONS
CARBIDES
CARBON COMPOUNDS
CARBON ISOTOPES
CHEMICAL COATING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
ELEMENTARY PARTICLES
ENERGY RANGE
EVEN-ODD NUCLEI
FERMIONS
HADRONS
ISOTOPES
LEPTONS
LIGHT NUCLEI
MAGNETIC RESONANCE
MEV RANGE
NUCLEI
NUCLEONS
RADIATION EFFECTS
RESONANCE
SILICON COMPOUNDS
SILICON ISOTOPES
STABLE ISOTOPES
SURFACE COATING
360605* - Materials- Radiation Effects