Electron spin resonance in electron-irradiated 3C-SiC

Journal Article · Wed Nov 01 04:00:00 EST 1989 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.343920· OSTI ID:5299387

Itoh, H; Hayakawa, N ^[1]; Nashiyama, I; Sakuma, E ^[2]

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1. Takasaki Radiation Chemistry Research Establishment, Japan Atomic Energy Research Institute, Watanuki, Takasaki, Gunma 370-12, Japan (JP)
2. Electrotechnical Laboratory, Umezono, Tsukuba, Ibaraki 305, Japan

Electron-irradiation-induced defects in epitaxially grown 3C-SiC crystals have been studied by electron-spin-resonance (ESR) measurements. The results indicate the presence of an isotropic ESR center that consists of five lines equally spaced at about 1.5 G and has a {ital g} value of 2.0029{plus minus}0.0001. Isochronal and isothermal annealing of electron-irradiated 3C-SiC showed that this center was annealed at three stages (150, 350, and 750 {degree}C) and that the 750 {degree}C stage exhibited first-order reaction with an activation energy of 2.2{plus minus}0.3 eV.

• OSTI ID: 5299387
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 66:9; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ACTIVATION ENERGY
ANNEALING
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CUBIC LATTICES
DEPOSITION
ELECTRON COLLISIONS
ELECTRON SPIN RESONANCE
ELEMENTS
ENERGY
EPITAXY
FREQUENCY RANGE
GHZ RANGE
GHZ RANGE 01-100
HEAT TREATMENTS
LANDE FACTOR
LOW TEMPERATURE
MAGNETIC RESONANCE
MEDIUM TEMPERATURE
RESONANCE
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SUBSTRATES
SURFACE COATING
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE