Electron spin resonance in electron-irradiated 3C-SiC

Journal Article · Wed Nov 01 00:00:00 EST 1989 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.343920· OSTI ID:5299387

Itoh, H; Hayakawa, N ^[1]; Nashiyama, I; Sakuma, E ^[2]

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1. Takasaki Radiation Chemistry Research Establishment, Japan Atomic Energy Research Institute, Watanuki, Takasaki, Gunma 370-12, Japan (JP)
2. Electrotechnical Laboratory, Umezono, Tsukuba, Ibaraki 305, Japan

Electron-irradiation-induced defects in epitaxially grown 3C-SiC crystals have been studied by electron-spin-resonance (ESR) measurements. The results indicate the presence of an isotropic ESR center that consists of five lines equally spaced at about 1.5 G and has a {ital g} value of 2.0029{plus minus}0.0001. Isochronal and isothermal annealing of electron-irradiated 3C-SiC showed that this center was annealed at three stages (150, 350, and 750 {degree}C) and that the 750 {degree}C stage exhibited first-order reaction with an activation energy of 2.2{plus minus}0.3 eV.

• OSTI ID: 5299387
• Journal Information: Journal of Applied Physics; (USA), Vol. 66:9; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON CARBIDES
CRYSTAL DEFECTS
ELECTRON COLLISIONS
ACTIVATION ENERGY
ANNEALING
CHEMICAL VAPOR DEPOSITION
CUBIC LATTICES
ELECTRON SPIN RESONANCE
EPITAXY
GHZ RANGE 01-100
LANDE FACTOR
LOW TEMPERATURE
MEDIUM TEMPERATURE
SILICON
SUBSTRATES
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
COLLISIONS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DEPOSITION
ELEMENTS
ENERGY
FREQUENCY RANGE
GHZ RANGE
HEAT TREATMENTS
MAGNETIC RESONANCE
RESONANCE
SEMIMETALS
SILICON COMPOUNDS
SURFACE COATING
360603* - Materials- Properties