Optically detected magnetic resonance studies of defects in electron-irradiated 3C SiC layers

Journal Article · Sat Feb 01 04:00:00 EST 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.55.2863· OSTI ID:450361

Son, N T; Soerman, E; Chen, W M; Hallin, C; Kordina, O; Monemar, B; Janzen, E ^[1]; Lindstroem, J L ^[2]

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1. Department of Physics and Measurement Technology, Linkoeping University, S-581 83 Linkoeping (Sweden)
2. National Defense Research Institute, P.O. Box 1165, S-581 11 Linkoeping (Sweden)

Defects in electron-irradiated 3C SiC were studied by optically detected magnetic resonance (ODMR). In addition to the isotropic L2 center previously reported, an ODMR spectrum labeled L3, with a trigonal symmetry and an effective electron spin S=1, was observed after annealing at {approximately}750{degree}C. The g values of the center along and perpendicular to the trigonal axis were determined as g{sub {parallel}}=2.0041 and g{sub {perpendicular}}=2.0040. The anisotropy of the spectrum is accounted for by the spin-spin interaction with a crystal-field splitting value D=4.2{times}10{sup {minus}2} cm{sup {minus}1}. From a spectral dependence study of the ODMR signal, the defect is found to be related to a photoluminescence band in the near midgap region. The defect is likely a complex involving a silicon vacancy and another intrinsic defect as suggested from its trigonal symmetry and annealing behavior. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 450361
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 5 Vol. 55; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
CARBON COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL FIELD
CRYSTAL STRUCTURE
ELECTRON BEAMS
MAGNETIC RESONANCE
PHYSICAL RADIATION EFFECTS
SILICON CARBIDES
SILICON COMPOUNDS
SPIN-SPIN RELAXATION