CVD growth and properties of boron phosphide on 3C-SiC

Journal Article · Tue May 17 04:00:00 EDT 2016 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2016.05.031· OSTI ID:1354320

Padavala, Balabalaji; Frye, C. D.; Wang, Xuejing; Raghothamachar, Balaji; Edgar, J. H.

Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study, 3C-SiC was tested as a substrate for BP epitaxy. BP films were grown on 3C-SiC(100)/Si, 3C-SiC(111)/Si, and 3C-SiC(111)/4H-SiC(0001) substrates in a horizontal chemical vapor deposition (CVD) system. Films were produced with good crystalline orientation and morphological features in the temperature range of 1000–1200 °C using a PH3+B2H6+H2 mixture. Rotational twinning was absent in the BP due to the crystal symmetry-matching with 3C-SiC. Confocal 3D Raman imaging of BP films revealed primarily uniform peak shift and peak widths across the scanned area, except at defects on the surface. Synchrotron white beam X-ray topography showed the epitaxial relationship between BP and 3C-SiC was (100) <011>BP||(100) <011>3C-SiC and (111)View the MathML sourceBP||(111)View the MathML source3C-SiC. Scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis indicated residual tensile strain in the films and improved crystalline quality at temperatures below 1200 °C. These results indicated that BP properties could be further enhanced by employing high quality bulk 3C-SiC or 3C-SiC epilayers on 4H-SiC substrates.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• OSTI ID: 1354320
• Report Number(s): BNL--112836-2016-JA
• Journal Information: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 449; ISSN 0022-0248
• Publisher: Elsevier
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
A1. Characterization
A1. Defects
A1. High resolution X-ray diffraction
A1. X-ray topography
A3. Hydride vapor phase epitaxy
B2. Semiconducting III–V materials