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Title: Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

Solution-processed sodium alginate electrolyte film shows a high proton conductivity of ∼5.5 × 10{sup −3} S/cm and a high lateral electric-double-layer (EDL) capacitance of ∼2.0 μF/cm{sup 2} at room temperature with a relative humidity of 57%. Low-voltage in-plane-gate indium-zinc-oxide-based EDL transistors laterally gated by sodium alginate electrolytes are fabricated on glass substrates. The field-effect mobility, current ON/OFF ratio, and subthreshold swing of such EDL transistors are estimated to be 4.2 cm{sup 2} V{sup −1} s{sup −1}, 2.8 × 10{sup 6}, and 130 mV/decade, respectively. At last, a low-voltage driven resistor-load inverter is also demonstrated. Such in-plane-gate EDL transistors have potential applications in portable electronics and low-cost biosensors.
Authors:
;  [1] ;  [2] ;  [1] ;  [3]
  1. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)
  2. (China)
  3. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22261645
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALGINATES; ELECTROLYTES; PROTON CONDUCTIVITY; SODIUM; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS; ZINC OXIDES