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Title: Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.
Authors:
; ; ; ; ; ; ;  [1] ;  [2]
  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)
  2. School of Electrical and Electronic Information, Jilin Institute of Architecture and Civil Engineering, Changchun 130118 (China)
Publication Date:
OSTI Identifier:
22261601
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTROLUMINESCENCE; GALLIUM NITRIDES; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MONOCRYSTALS; QUANTUM EFFICIENCY; QUANTUM WIRES; THIN FILMS; ULTRAVIOLET RADIATION; ZINC OXIDES