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Title: Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. Aftermore » the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.« less
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [1] ;  [2]
  1. School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22259300
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; LAYERS; MICROSTRUCTURE; MONOCRYSTALS; PHASE TRANSFORMATIONS; RAMAN EFFECT; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SILICON; SILICON CARBIDES; THIN FILMS