Physical properties of RT-LPCVD and LPCVD polysilicon thin films: Application to emitter solar cell

Book · Fri Dec 30 23:00:00 EST 1994

OSTI ID:191028

Lemiti, M; Semmache, B; Barbier, D; Laugier, A ^[1]; Le, Q N ^[2]

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1. LPM-INSA de Lyon, Villeurbanne (France)
2. Photowatt International, Bourgoin-Jallieu (France)

This investigation was implemented in the framework of a novel all-low thermal budget polysilicon emitter solar cells fabrication technology. A comparative study of structural and electrical properties of thin silicon layer deposited by silane pyrolysis in a classical hot-wall furnace (LPCVD) and a cold-wall RTP reactor (RT-LPCVD) has been made. Deposition conditions and rapid thermal anneals were varied in order to improve the physical properties of RT-LPCVD polysilicon films. The structural properties have been characterized by means of grazing X-ray diffraction and cross-section TEM analysis. Sheet resistivity measurements performed on POCl{sub 3}-doped and subsequently rapid thermal annealed films showed the feasibility of low resistivity films particularly when the polysilicon layers are initially deposited in the amorphous state. Finally, RTCVD polysilicon emitter solar cells with various thicknesses were tested by spectral photo-response analysis.

• OSTI ID: 191028
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ANNEALING
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DOPED MATERIALS
EFFICIENCY
ELECTRIC CONDUCTIVITY
EXPERIMENTAL DATA
MICROSTRUCTURE
PERFORMANCE
PHOSPHORUS
PYROLYSIS
REACTION KINETICS
SILANES
SILICON
SILICON OXIDES
SILICON SOLAR CELLS
SPECTRAL RESPONSE
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION