Polysilicon emitter solar cell

Journal Article · Sun Dec 01 04:00:00 EST 1985 · IEEE Electron Device Lett.; (United States)

DOI:https://doi.org/10.1109/EDL.1985.26264· OSTI ID:6258913

Tarr, N G

A new solar structure is reported in which the emitter consists of a thin layer of in situ phosphorus-doped polysilicon deposited by a low-pressure chemical vapor deposition technique. The highest process temperature required to fabricate this structure is only 627 C. Although the use of a polysilicon emitter results in some degradation in blue response, both theoretical and experimental results are presented indicating that photocurrent densities in excess of 30 mA/sq cm are attainable under AM1 illumination. The low back-injection current associated with the polysilicon emitter has allowed a very high open circuit voltage of 652 mV to be obtained at 28 C in a cell illuminated to give a short circuit current density of 30 mA/sq cm. 12 references.

• Research Organization: Carleton Univ., Ottawa, Canada
• OSTI ID: 6258913
• Journal Information: IEEE Electron Device Lett.; (United States), Journal Name: IEEE Electron Device Lett.; (United States) Vol. EDL-6; ISSN EDLED
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTALS
DATA
DIRECT ENERGY CONVERTERS
ELECTRON EMISSION
EMISSION
EQUIPMENT
EXPERIMENTAL DATA
INFORMATION
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOELECTRIC EMISSION
PHOTOVOLTAIC CELLS
POLYCRYSTALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPECIFICATIONS