Modeling of gas-phase chemistry in the chemical vapor deposition of polysilicon in a cold wall system
- Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering
The relative contribution of gas-phase chemistry to deposition processes is an important issue both from the standpoint of operation and modeling of these processes. In polysilicon deposition from thermally activated silane in a cold wall rapid thermal chemical vapor deposition (RTCVD) system, the relative contribution of gas-phase chemistry to the overall deposition rate was examined by a mass-balance model. Evaluating the process at conditions examined experimentally, the model indicated that gas-phase reactions may be neglected to good accuracy in predicting polysilicon deposition rate. The model also provided estimates of the level of gas-phase generated SiH[sub 2] associated with deposition on the cold-process chamber walls.
- OSTI ID:
- 6256558
- Journal Information:
- Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 140:6; ISSN JESOAN; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101* -- Metals & Alloys-- Preparation & Fabrication
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DEPOSITION
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
KINETICS
MASS BALANCE
MATHEMATICAL MODELS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
POLYCRYSTALS
REACTION KINETICS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING