A predictive model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system
- Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering
The chemical vapor deposition of polysilicon from thermally activated silane in a cold wall, single-wafer rapid thermal system was studied by experimentation at a variety of low pressure conditions, including very high temperatures. The effect of diluent gas on polysilicon deposition rates was examined using hydrogen, helium, and krypton. A mass-transfer model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system was developed. This model was used to produce an empirical rate expression for silicon deposition from silane by regressing kinetic parameters to fit experimental data. The resulting model provided accurate predictions over widely varying conditions in the experimental data.
- OSTI ID:
- 7148730
- Journal Information:
- Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 141:6; ISSN JESOAN; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DEPOSITION
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
MATHEMATICAL MODELS
MATHEMATICS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
POLYCRYSTALS
REGRESSION ANALYSIS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
STATISTICS
SURFACE COATING