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Title: Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors

We fabricated ZnO-nanowire (NW) field-effect transistors (FETs) coated with poly(3-hexylthiophene) (P3HT) and characterized the electron-transfer characteristics from the P3HT to the ZnO NWs. Under irradiation by laser light with a wavelength of 532 nm, photo-induced electrons were created in the P3HT and then transported to the ZnO NWs, constituting a source-drain current in the initially enhancement-mode P3HT-coated ZnO-NW FETs. As the intensity of the light increased, the current increased, and its threshold voltage shifted to the negative gate-bias direction. We estimated the photo-induced electron density and the electron-transfer characteristics, which will be helpful for understanding organic-inorganic hybrid optoelectronic devices.
Authors:
; ; ; ; ; ; ;  [1] ; ;  [2] ;  [3]
  1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
  2. Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
  3. Jeonju Center, Korea Basic Science Institute, Jeonju 561-756 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22253963
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CURRENTS; ELECTRIC POTENTIAL; ELECTRON DENSITY; ELECTRON TRANSFER; ELECTRONS; FIELD EFFECT TRANSISTORS; IRRADIATION; LASERS; WAVELENGTHS; ZINC OXIDES