Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics
- School of Electrical and Computer Engineering, The Institute for Nanoelectronics and Computing, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)
In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO{sub 2} gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V{sub th}) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V{sub th} parameters of the SiO{sub 2}-based ZnO NW-FETs display average shifts of {approx}-4.0 and {approx}-10.9 V for 5.71 and 285 krad(Si) H{sup +} irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H{sup +} irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H{sup +} irradiation are significantly lower than those for the corresponding SiO{sub 2} gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.
- OSTI ID:
- 20883168
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 89; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Gamma-ray irradiation effects on VLSI geometry MOSFETs fabricated on laser recrystallized SOI wafers
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics