Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy

Journal Article · Tue Oct 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613100035· OSTI ID:22210492

Andreev, B. A. ^[1]; Denisov, D. V.; Shek, E. I. ^[2]

---

1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

The photoluminescence spectra of light-emitting structures based on silicon doped with erbium during the course of molecular-beam epitaxy at a temperature of 500 Degree-Sign C are studied at 4.2 K on being annealed at 800-900 Degree-Sign C. Three sets of lines belonging to the emitting centers of erbium in silicon with a low oxygen-impurity concentration are revealed.

• OSTI ID: 22210492
• Journal Information: Semiconductors, Vol. 47, Issue 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DOPED MATERIALS
ERBIUM
MOLECULAR BEAM EPITAXY
OXYGEN
PHOTOLUMINESCENCE
SILICON