Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

Journal Article · Sat Jan 15 04:00:00 EST 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611010143· OSTI ID:22004884

Shmagin, V B; Drozdov, M N ^[1]; Marychev, M O ^[2]; Kudryavtsev, K E ^[1]; Kuznetsov, M V ^[3]; Andreev, B A ^[1]; Kornaukhov, A V ^[3]; Krasilnik, Z F ^[1]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Lobachevsky State University (Russian Federation)
3. Lobachevsky State University, Research Physicotechnical Institute (Russian Federation)

The dependence of the concentrations of the Er impurity and ionized donors on the epitaxy temperature has been studied before and after annealing of Si:Er/Si layers grown by sublimation molecular-beam epitaxy. n-Si:Er layers have been grown in the temperature range 400-800 Degree-Sign C and annealed in hydrogen atmosphere at a temperature of 800 Degree-Sign C for 30 min. The possible nature of the donor centers is discussed.

• OSTI ID: 22004884
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
IMPURITIES
LAYERS
MOLECULAR BEAM EPITAXY
SUBLIMATION
TEMPERATURE RANGE