Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy

Journal Article · Fri Feb 15 04:00:00 EST 2008 · Semiconductors

DOI:https://doi.org/10.1007/S11453-008-2003-Z· OSTI ID:21087934

Belova, O V; Shabanov, V N; Kasatkin, A P; Kuznetsov, O A ^[1]; Yablonskii, A N ^[2]; Kuznetsov, M V; Kornaukhov, A V ^[1]; Andreev, B A; Krasil'nik, Z F ^[2]

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1. Nizhni Novgorod State University, Physicotechnical Research Institute (Russian Federation)
2. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

Temperature dependences of the concentration and electron Hall mobility in Si:Er/Sr epitaxial layers grown at T = 600 deg. C and annealed at 700 or 900 deg. C have been investigated. The layers were grown by sublimation molecular-beam epitaxy in vacuum ({approx}10{sup -5} Pa). The energy levels of Er-related donor centers are located 0.21-0.27 eV below the bottom of the conduction band of Si. In the range 80-300 K, the electron Hall mobility in unannealed Si:Er epitaxial layers was lower than that in Czochralski-grown single crystals by a factor of 3-10. After annealing the layers, the fraction of electron scattering from Er donor centers significantly decreases.

• OSTI ID: 21087934
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 42; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ELECTRICAL PROPERTIES
ELECTRONS
ENERGY LEVELS
ERBIUM IONS
LAYERS
MILLI EV RANGE
MOBILITY
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
SILICON
SUBLIMATION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K